Best, John S. and McCaldin, J. O. (1975) Interfacial impurities and the reaction between Si and evaporated Al. Journal of Applied Physics, 46 (9). pp. 4071-4072. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:BESjap75
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| Additional Information: | Copyright © 1975 American Institute of Physics. Received 3 March 1975; in final form 19 May 1975. The authors wish to thank K. Evans for SEM photographs and C.A. Mead for use of a Reichert microscope. Work supported in part by the Office of Naval Research and NASA through the Jet Propulsion Laboratory of the California Institute of Technology. | ||||||
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| Record Number: | CaltechAUTHORS:BESjap75 | ||||||
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:BESjap75 | ||||||
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| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 11277 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Archive Administrator | ||||||
| Deposited On: | 29 Jul 2008 06:04 | ||||||
| Last Modified: | 26 Dec 2012 10:11 |
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