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Interfacial impurities and the reaction between Si and evaporated Al

Best, John S. and McCaldin, J. O. (1975) Interfacial impurities and the reaction between Si and evaporated Al. Journal of Applied Physics, 46 (9). pp. 4071-4072. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:BESjap75

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Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.322113DOIUNSPECIFIED
http://link.aip.org/link/?JAPIAU/46/4071/1PublisherUNSPECIFIED
Additional Information:Copyright © 1975 American Institute of Physics. Received 3 March 1975; in final form 19 May 1975. The authors wish to thank K. Evans for SEM photographs and C.A. Mead for use of a Reichert microscope. Work supported in part by the Office of Naval Research and NASA through the Jet Propulsion Laboratory of the California Institute of Technology.
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Office of Naval ResearchUNSPECIFIED
NASAUNSPECIFIED
Record Number:CaltechAUTHORS:BESjap75
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:BESjap75
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:11277
Collection:CaltechAUTHORS
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Deposited On:29 Jul 2008 06:04
Last Modified:26 Dec 2012 10:11

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