Best, J. S. (1979) Lattice-matched heterostructures as Schottky barriers: HgSe/CdSe. Journal of Vacuum Science and Technology, 16 (5). pp. 1130-1133. ISSN 0022-5355. http://resolver.caltech.edu/CaltechAUTHORS:BESjvst79
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A novel structure, which is both a lattice-matched heterostructure and a Schottky barrier, is fabricated by epitaxial growth of (111) oriented HgSe on (0001) oriented CdSe. Hydrogen transport CVD is used, with a HgSe source temperature of 420°C and a CdSe substrate temperature of 330°C. Single crystal growth was obtained. Of the two orientations possible for the crystal symmetries involved, only one was observed for a given specimen. The ''Schottky barrier'' height for this lattice-matched heterostructure is 0.73±0.02 eV as measured by the photoresponse method. This uncertainty is substantially less than is usual for Schottkies. The magnitude is greater by about one-quarter volt than is achievable with the most electronegative elemental metal, Au, in qualitative agreement with work function arguments.
|Additional Information:||© 1979 American Vacuum Society. Received 26 February 1979; accepted 24 May 1979. The authors wish to thank T.F. Kuech, T.C. McGill, and R.A. Scranton for discussions; L. Tutt for help with the crystal growth; and S.S. Lau for performing the channel measurements. This work was supported in part by the Office of Naval Research (L. Cooper). [J.S.B. was a] National Science Foundation Graduate Fellow.|
|Subject Keywords:||SCHOTTKY BARRIER DIODES; CRYSTAL LATTICES; EPITAXY; MERCURY SELENIDES; CADMIUM SELENIDES; CHEMICAL VAPOR DEPOSITION; HIGH TEMPERATURE; WORK FUNCTIONS; ELECTRON MICROSCOPY; X–RAY DIFFRACTION; ELECTRICAL PROPERTIES|
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|Deposited On:||29 Jul 2008 06:18|
|Last Modified:||26 Dec 2012 10:11|
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