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Growth of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) by molecular beam epitaxy

Fathauer, R. W. and Nieh, C. W. and Xiao, Q. F. and Hashimoto, Shin (1989) Growth of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) by molecular beam epitaxy. Applied Physics Letters, 55 (3). pp. 247-249. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:FATapl89

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Abstract

The codeposition of Si and Co on a heated Si(111) substrate is found to result in epitaxial columns of CoSi2 if the Si:Co ratio is greater than approximately 3:1. These columns are surrounded by a Si matrix which shows bulk-like crystalline quality based on transmission electron microscopy and ion channeling. This phenomenon has been studied as functions of substrate temperature and Si:Co ratio. Samples with columns ranging in average diameter from approximately 25 to 130 nm have been produced.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.102383DOIUNSPECIFIED
http://link.aip.org/link/?APPLAB/55/247/1PublisherUNSPECIFIED
Additional Information:© 1989 American Institute of Physics. Received 20 March 1989; accepted 12 May 1989. We would like to acknowledge helpful discussions with Paula Grunthaner, True-Lin Lin, Brian Hunt, and Walter Gibson. The research described in this letter was carried out by the Jet Propulsion Laboratory (JPL), California Institute of Technology, and was supported by the Strategic Defense Initiative Organization, Innovative Science and Technology Office and the National Aeronautics and Space Administration. The work was performed as part of JPL’s Center for Space Microelectronics Technology. Q.F. Xiao and S. Hashimoto acknowledge Hamamatsu Corporation for generously providing them with high-resolution detector diodes used for RBS measurements. TEM analysis was partially supported by the National Science Foundation-Materials Research Group under grant No. DMR 8811795.
Funders:
Funding AgencyGrant Number
Strategic Defense Initiative, Innovative Science and Technology OfficeUNSPECIFIED
NASAUNSPECIFIED
National Science FoundationDMR 8811795
Subject Keywords:ION CHANNELING, MOLECULAR BEAM EPITAXY, COBALT SILICIDES, SILICON, COBALT, THIN FILMS, TRANSMISSION ELECTRON MICROSCOPY, CHEMICAL COMPOSITION, STOICHIOMETRY, VAPOR DEPOSITED COATINGS, INTERFACE STRUCTURE, MICROSTRUCTURE
Record Number:CaltechAUTHORS:FATapl89
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:FATapl89
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:11360
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:11 Aug 2008 23:34
Last Modified:26 Dec 2012 10:13

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