So, F. C. T. and Kolawa, E. and Zhao, X.-A. and Pan, E. T.-S. and Nicolet, M.-A. (1988) WxN1–x alloys as diffusion barriers between Al and Si. Journal of Applied Physics, 64 (5). pp. 2787-2789. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:SOFjap88
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Reactively sputtered tungsten nitride (WxN1–x) layers are investigated as diffusion barriers between Al overlayers and Si shallow n + -p junctions. Both amorphous W80 N20 and polycrystalline W60 N40 films were found to be very effective in preserving the integrity of the n + -p diodes for 30-min vacuum annealing up to 575 °C. Diode failure at higher temperatures is caused by localized penetration of Al into <Si> through the WxN1–x barriers. The effectiveness of the barrier decreases for polycrystalline W90 N10 and is worse for pure W.
|Additional Information:||© 1988 American Institute of Physics. We thank R. Pieters-Emerick for help in manuscript preparation. This work is supported by the Army Research Office under Contract No. DAAG29-85-K-0192. Dr. D. B. Rutledge is gratefully acknowledged for granting us access to his HP Semiconductor Parameter Analyzer and photolithographic facilities.|
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|Deposited On:||22 Dec 2005|
|Last Modified:||26 Dec 2012 08:42|
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