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WxN1–x alloys as diffusion barriers between Al and Si

So, F. C. T. and Kolawa, E. and Zhao, X.-A. and Pan, E. T.-S. and Nicolet, M.-A. (1988) WxN1–x alloys as diffusion barriers between Al and Si. Journal of Applied Physics, 64 (5). pp. 2787-2789. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:SOFjap88

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Abstract

Reactively sputtered tungsten nitride (WxN1–x) layers are investigated as diffusion barriers between Al overlayers and Si shallow n + -p junctions. Both amorphous W80 N20 and polycrystalline W60 N40 films were found to be very effective in preserving the integrity of the n + -p diodes for 30-min vacuum annealing up to 575 °C. Diode failure at higher temperatures is caused by localized penetration of Al into <Si> through the WxN1–x barriers. The effectiveness of the barrier decreases for polycrystalline W90 N10 and is worse for pure W.


Item Type:Article
Additional Information:© 1988 American Institute of Physics. We thank R. Pieters-Emerick for help in manuscript preparation. This work is supported by the Army Research Office under Contract No. DAAG29-85-K-0192. Dr. D. B. Rutledge is gratefully acknowledged for granting us access to his HP Semiconductor Parameter Analyzer and photolithographic facilities.
Record Number:CaltechAUTHORS:SOFjap88
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:SOFjap88
Alternative URL:http://dx.doi.org/10.1063/1.341579
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1138
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:22 Dec 2005
Last Modified:26 Dec 2012 08:42

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