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A fully-integrated 1.8-V, 2.8-W, 1.9-GHz, CMOS power amplifier

Aoki, I. and Kee, S. and Rutledge, D. and Hajimiri, A. (2003) A fully-integrated 1.8-V, 2.8-W, 1.9-GHz, CMOS power amplifier. In: IEEE Radio Frequency Integrated Circuits (RFIC 2003) Symposium. IEEE , Piscataway, NJ, pp. 199-202. ISBN 0-7803-7694-3

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This paper demonstrated the first 2-stage, 2.8W, 1.8V, 1.9GHz fully-integrated DAT power amplifier with 50Ω input and output matching using 0.18μm CMOS transistors. It has a small-signal gain of 27dB. The amplifier provides 2.8W of power into a 50Ω load with a PAE of 50%.

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Additional Information:© Copyright 2003 IEEE. Reprinted with permission. Publication Date: 8-10 June 2003. Date Published in Issue: 2003-07-28. The authors would like to thank National Science Foundation, Lee Center for Advanced Networking for support and IBM Corp. for fabrication of the chips.
Funding AgencyGrant Number
National Science FoundationUNSPECIFIED
Lee Center for Advanced Networking, CaltechUNSPECIFIED
Subject Keywords:CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; impedance matching; power integrated circuits; CMOS power amplifier; RF CMOS IC; RF power amplifier; distributed active transformer; input matching; output matching; two-stage amplifier
Record Number:CaltechAUTHORS:AOKrfic03
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:11474
Deposited By: Kristin Buxton
Deposited On:04 Sep 2008 04:02
Last Modified:26 Dec 2012 10:14

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