Liu, W. S. and Chen, J. S. and Nicolet, M-A. and Arbet-Engels, V. and Wang, K. L. (1992) Instability of a GexSi1−xO2 film on a GexSi1−x layer. Journal of Applied Physics, 72 (9). pp. 4444-4446. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:LIUjap92c
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The stability of an amorphous GexSi1−xO2 in contact with an epitaxial (100)GexSi1−x layer obtained by partially oxidizing an epitaxial GexSi1−x layer on a (100)Si substrate in a wet ambient at 700 °C is investigated for x=0.28 and 0.36 upon annealing in vacuum at 900 °C for 3 h, aging in air at room temperature for 5 months, and immersion in water. After annealing at 900 °C, the oxide remains amorphous and the amount of GeO2 in the oxide stays constant, but some small crystalline precipitates with a lattice constant similar to that of the underlying GeSi layer emerge in the oxide very near the interface for both x. Similar precipitates are also observed after aging for both x. The appearance of these precipitates can be explained by the thermodynamic instability of GexSi1−xO2 in contact with GexSi1−x. In water at RT, 90% of GeO2 in the oxide is dissolved for x=0.36, while the oxide remains conserved for x=0.28.
|Additional Information:||Copyright © 1992 American Institute of Physics. Received 13 April 1992; accepted 22 July 1992. This work was supported by the Semiconductor Research Corporation under a coordinated research program between Caltech (92-SJ-100) and UCLA (92-SJ-088). We thank N.M. Abuhadba and Dr. C. Aita at the University of Wisconsin-Milwaukee for IR analyses of some samples. The technical assistance of R. Gorris is also thankfully acknowledged.|
|Subject Keywords:||GERMANIUM OXIDES, SILICON OXIDES, TERNARY COMPOUNDS, THIN FILMS, AMORPHOUS STATE, GERMANIUM SILICIDES, OXIDATION, ANNEALING, PRECIPITATION, THERMODYNAMIC PROPERTIES|
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|Deposited On:||03 Sep 2008 23:56|
|Last Modified:||26 Dec 2012 10:15|
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