Liu, W. S. and Lee, E. W. and Nicolet, M-A. and Arbet-Engels, V. and Wang, K. L. (1992) Importance of sample preheating in oxidation of GexSi1−x. Journal of Applied Physics, 71 (7). pp. 3626-3627. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:LIUjap92a
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Wet thermal oxidation at 1000 °C of a 470-nm-thick epitaxial Ge0.36Si0.64 layer on (100)Si produces oxides of different composition depending on the details of the oxidation procedure. When a cold sample is directly exposed to the hot steam, the surface layer of the oxide contains both Ge and Si. Only SiO2 forms if a preheated sample is exposed to the hot steam. The effect is not present for dry oxidation and is attributed to the known enhancement of the wet oxidation rate by Ge, coupled with the transient warm up of a sample when it is immersed cold in hot steam.
|Additional Information:||Copyright © 2008 American Institute of Physics. Received 9 September 1991; accepted 27 December 1991. This work was supported by the Semiconductor Research Corporation under a coordinated research program at Caltech (91-SJ-100) and at UCLA (91-SJ-088). We thank R. Gorris for technical assistance.|
|Subject Keywords:||GERMANIUM SILICIDES, OXIDATION, HEAT TREATMENTS, EPITAXIAL LAYERS, CHEMICAL COMPOSITION, RBS, MOLECULAR BEAM EPITAXY|
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|Deposited On:||04 Sep 2008 00:07|
|Last Modified:||26 Dec 2012 10:15|
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