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Importance of sample preheating in oxidation of GexSi1−x

Liu, W. S. and Lee, E. W. and Nicolet, M-A. and Arbet-Engels, V. and Wang, K. L. (1992) Importance of sample preheating in oxidation of GexSi1−x. Journal of Applied Physics, 71 (7). pp. 3626-3627. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:LIUjap92a

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Abstract

Wet thermal oxidation at 1000 °C of a 470-nm-thick epitaxial Ge0.36Si0.64 layer on (100)Si produces oxides of different composition depending on the details of the oxidation procedure. When a cold sample is directly exposed to the hot steam, the surface layer of the oxide contains both Ge and Si. Only SiO2 forms if a preheated sample is exposed to the hot steam. The effect is not present for dry oxidation and is attributed to the known enhancement of the wet oxidation rate by Ge, coupled with the transient warm up of a sample when it is immersed cold in hot steam.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.350922DOIUNSPECIFIED
http://link.aip.org/link/?JAPIAU/71/3626/1PublisherUNSPECIFIED
Additional Information:Copyright © 2008 American Institute of Physics. Received 9 September 1991; accepted 27 December 1991. This work was supported by the Semiconductor Research Corporation under a coordinated research program at Caltech (91-SJ-100) and at UCLA (91-SJ-088). We thank R. Gorris for technical assistance.
Funders:
Funding AgencyGrant Number
Semiconductor Research Corporation91-SJ-100
Semiconductor Research Corporation91-SJ-088
Subject Keywords:GERMANIUM SILICIDES, OXIDATION, HEAT TREATMENTS, EPITAXIAL LAYERS, CHEMICAL COMPOSITION, RBS, MOLECULAR BEAM EPITAXY
Record Number:CaltechAUTHORS:LIUjap92a
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:LIUjap92a
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:11548
Collection:CaltechAUTHORS
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Deposited On:04 Sep 2008 00:07
Last Modified:26 Dec 2012 10:15

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