McCaldin, J. O. and Mayer, J. W. (1970) Donor behavior in indium-alloyed silicon. Applied Physics Letters, 17 (9). pp. 365-366. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:MCCapl70
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The anomalous doping behavior of Si regrown from In solution was studied by (1) Schottky barrier evaluation of conductivity type, (2) electron microprobe analysis for phosphorus, and (3) channeling effect measurements for interstitial In. The latter showed In present at ~ 10^19 cm^–3, but not occupying a regular substitutional or interstitial position. A correlation was found in the first two measurements between phosphorus contamination and n-type conductivity. When the In was contacted only by quartz freshly etched in HF, the n-type behavior and phosphorus contamination disappeared. The anomalous doping behavior is most likely due to phosphorus inpurity picked up by the In.
|Additional Information:||©1970 The American Institute of Physics (Received 17 August 1970) The authors wish to thank A. Chodos, who performed the electron microprobe measurements.|
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|Deposited On:||24 Dec 2005|
|Last Modified:||26 Dec 2012 08:43|
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