Tsai, C. J. and Dommann, A. and Nicolet, M. A. and Vreeland, T., Jr. (1991) Self-consistent determination of the perpendicular strain profile of implanted Si by analysis of x-ray rocking curves. Journal of Applied Physics, 69 (4). pp. 2076-2079. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:TSAjap91
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Results of a determination of strain perpendicular to the surface and of the damage in (100) Si single crystals irradiated by 250-keV Ar+ ions at 77 K are presented. Double-crystal x-ray diffraction and dynamical x-ray diffraction theory are used. Trial strain and damage distributions were guided by transmission electron microscope observations and Monte Carlo simulation of ion energy deposition. The perpendicular strain and damage profiles, determined after sequentially removing thin layers of Ar+-implanted Si, were shown to be self-consistent, proving the uniqueness of the deconvolution. Agreement between calculated and experimental rocking curves is obtained with strain and damage distributions which closely follow the shape of the trim simulations from the maximum damage to the end of the ion range but fall off more rapidly than the simulation curve near the surface. Comparison of the trim simulation and the strain profile of Ar+-implanted Si reveals the importance of annealing during and after implantation and the role of complex defects in the final residual strain distribution.
|Additional Information:||Copyright © 1991 American Institute of Physics. Received 21 September 1990; accepted 31 October 1990. This work was supported by the Semiconductor Research Corporation under Contract No. 87-SJ-100. We also acknowledge the support of the Swiss National Science Foundation that provided a fellowship to A. Dommann.|
|Subject Keywords:||X−RAY DIFFRACTION, STRAINS, SILICON, PHYSICAL RADIATION EFFECTS, ION IMPLANTATION, ARGON IONS, DAMAGE, ANNEALING, STRESS−STRAIN RELATION|
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|Deposited On:||22 Sep 2008 21:35|
|Last Modified:||26 Dec 2012 10:19|
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