Collins, R. T. and Kuech, T. F. and McGill, T. C. (1982) A DLTS study of deep levels in n-type CdTe. Journal of Vacuum Science and Technology, 21 (1). pp. 191-194. ISSN 0022-5355. http://resolver.caltech.edu/CaltechAUTHORS:COLjvst82
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We report the results of a DLTS study on the majority carrier deep level structure of three samples of n-type CdTe and the effects on the deep level structure of indium doped CdTe due to H2 annealing. H2 annealing did not qualitatively change the deep level structure of the annealed sample. It did cause the shallow level concentration to decrease with a proportional decrease in the deep level concentrations as a result of indium out-diffusion and compensation by native defects. Levels present in all of the materials studied have been characterized and attributed to either native defects or innate chemical impurities. Other levels present in indium doped material require above band gap illumination of the sample before they are observed. A possible model proposes that these levels arise from defect complexes.
|Additional Information:||© 1982 American Vacuum Society. Received 13 November 1981; accepted 11 February 1982. We wish to acknowledge Marti Mäenpää for his help with these experiments, Dr. J.O. McCaldin for valuable discussions, and Rockwell International for providing some of the samples. This work was supported in part by the Army Research Office under Contract No. DAAG29-80-C-0103. One of us (TFK) wishes to acknowledge the Office of Naval Research (Contract N00014-76-C-1068) for support during this work.|
|Subject Keywords:||N–TYPE CONDUCTORS, CADMIUM TELLURIDES, ANNEALING, INDIUM ADDITIONS, CRYSTAL DEFECTS, CHARGE CARRIERS|
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|Deposited By:||Archive Administrator|
|Deposited On:||29 Sep 2008 19:25|
|Last Modified:||26 Dec 2012 10:20|
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