Bartur, M. and Nicolet, M-A. (1983) Marker experiments for diffusion in the silicide during oxidation of PdSi, Pd2Si, CoSi2, and NiSi2 films on <Si>. Journal of Applied Physics, 54 (9). pp. 5404-5415. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:BARjap83
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Inert markers (evaporated tungsten and ion implanted Xenon) were used to investigate the mass transport through a silicide layer on a <Si> substrate during thermal oxidation at 700–900 °C. The SiO2 growth from PdSi, Pd2Si, CoSi2, and NiSi2 films on <Si> is a process limited by the diffusion of the oxidant from the ambient gas to the silicide/oxide interface. Possible diffusion processes through the silicide that supply Si to the growing SiO2 layer, but keep the silicide stoichiometry intact, are discussed. Backscattering spectrometry is used to monitor the marker position in the silicide layer. We find that the diffusing species during oxidation correlate with the moving species during silicide formation.
|Additional Information:||Copyright © 1983 American Institute of Physics. Received 22 November 1982; accepted 9 March 1983. The authors wish to thank the reviewer for very constructive criticism of the manuscript, Dr. K.N. Tu of IBM, Yorktown Heights, for his comments, and R. Gorris and R. Fernandez (Caltech) for technical assistance. The work was executed under the UR Fund of the Böhmische Physical Society (B.M. Ullrich), and was partially supported by Solid-State Devices, Inc. (A. Applebaum, President).|
|Subject Keywords:||palladium silicides, cobalt silicides, nickel silicides, silicon, diffusion, oxidation, films, experimental data, tungsten, xenon ions, substrates, temperature effects, high temperature, very high temperature, silicon oxides, interfaces, stoichiometry, backscattering, spectroscopy|
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|Deposited On:||09 Oct 2008 02:07|
|Last Modified:||26 Dec 2012 10:23|
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