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Formation of a high quality two-dimensional electron gas on cleaved GaAs

Pfeiffer, Loren and West, K. W. and Stormer, H. L. and Eisenstein, J. P. and Baldwin, K. W. and Gershoni, D. and Spector, J. (1990) Formation of a high quality two-dimensional electron gas on cleaved GaAs. Applied Physics Letters, 56 (17). pp. 1697-1699. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:PFEapl90

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Abstract

We have succeeded in fabricating a two-dimensional electron gas (2DEG) on the cleaved (110) edge of a GaAs wafer by molecular beam epitaxy (MBE). A (100) wafer previously prepared by MBE growth is reinstalled in the MBE chamber so that an in situ cleave exposes a fresh (110) GaAs edge for further MBE overgrowth. A sequence of Si-doped AlGaAs layers completes the modulation-doped structure at the cleaved edge. Mobilities as high as 6.1×10^5 cm^2/V s are measured in the 2DEG at the cleaved interface.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.103121DOIUNSPECIFIED
http://link.aip.org/link/?APPLAB/56/1697/1PublisherUNSPECIFIED
Additional Information:© 1990 American Institute of Physics. Received 2 February 1990; accepted 28 February 1990.
Subject Keywords:GALLIUM ARSENIDES, ELECTRON GAS, CLEAVAGE, TWO−DIMENSIONAL SYSTEMS, MOLECULAR BEAM EPITAXY, WAFERS, FABRICATION
Record Number:CaltechAUTHORS:PFEapl90
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:PFEapl90
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:12016
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:23 Oct 2008 15:41
Last Modified:26 Dec 2012 10:25

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