Pfeiffer, Loren and West, K. W. and Stormer, H. L. and Eisenstein, J. P. and Baldwin, K. W. and Gershoni, D. and Spector, J. (1990) Formation of a high quality two-dimensional electron gas on cleaved GaAs. Applied Physics Letters, 56 (17). pp. 1697-1699. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:PFEapl90
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We have succeeded in fabricating a two-dimensional electron gas (2DEG) on the cleaved (110) edge of a GaAs wafer by molecular beam epitaxy (MBE). A (100) wafer previously prepared by MBE growth is reinstalled in the MBE chamber so that an in situ cleave exposes a fresh (110) GaAs edge for further MBE overgrowth. A sequence of Si-doped AlGaAs layers completes the modulation-doped structure at the cleaved edge. Mobilities as high as 6.1×10^5 cm^2/V s are measured in the 2DEG at the cleaved interface.
|Additional Information:||© 1990 American Institute of Physics. Received 2 February 1990; accepted 28 February 1990.|
|Subject Keywords:||GALLIUM ARSENIDES, ELECTRON GAS, CLEAVAGE, TWO−DIMENSIONAL SYSTEMS, MOLECULAR BEAM EPITAXY, WAFERS, FABRICATION|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||23 Oct 2008 15:41|
|Last Modified:||26 Dec 2012 10:25|
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