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Multiquantum well structure with an average electron mobility of 4.0×10^6 cm^2/V s

Pfeiffer, L. N. and West, K. W. and Eisenstein, J. P. and Baldwin, K. W. and Gammel, P. (1992) Multiquantum well structure with an average electron mobility of 4.0×10^6 cm^2/V s. Applied Physics Letters, 61 (10). pp. 1211-1212. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:PFEapl92

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Abstract

We report a modulation-doped multiquantum well structure which suppresses the usual ambient light effect associated with modulation doping. Ten GaAs quantum wells 300-Å wide are symmetrically modulation doped using Si δ doping at the center of 3600-Å-wide Al0.1Ga0.9As barriers. The low field mobility of each well is 4.0×10^6 cm/V s at a density of 6.4×10^10 cm^−2 measured at 0.3 K either in the dark, or during, or after, exposure to light. This mobility is an order of magnitude improvement over previous work on multiwells.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.107597DOIUNSPECIFIED
http://link.aip.org/link/?APPLAB/61/1211/1PublisherUNSPECIFIED
Additional Information:© 1992 American Institute of Physics. Received 12 February 1992; accepted 8 July 1992.
Subject Keywords:GALLIUM ARSENIDES, ALUMINUM ARSENIDES, QUANTUM WELL STRUCTURES, CRYSTAL DOPING, DOPED MATERIALS, DELTA FUNCTION, SILICON ADDITIONS, ELECTRON MOBILITY, PHYSICAL RADIATION EFFECTS, PHOTONS, MOLECULAR BEAM EPITAXY
Record Number:CaltechAUTHORS:PFEapl92
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:PFEapl92
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:12018
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:23 Oct 2008 15:37
Last Modified:26 Dec 2012 10:25

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