Pfeiffer, L. N. and West, K. W. and Eisenstein, J. P. and Baldwin, K. W. and Gammel, P. (1992) Multiquantum well structure with an average electron mobility of 4.0×10^6 cm^2/V s. Applied Physics Letters, 61 (10). pp. 1211-1212. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:PFEapl92
![[img]](http://authors.library.caltech.edu/style/images/fileicons/application_pdf.png)
|
PDF
- Published Version
See Usage Policy. 237Kb |
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:PFEapl92
Abstract
We report a modulation-doped multiquantum well structure which suppresses the usual ambient light effect associated with modulation doping. Ten GaAs quantum wells 300-Å wide are symmetrically modulation doped using Si δ doping at the center of 3600-Å-wide Al0.1Ga0.9As barriers. The low field mobility of each well is 4.0×10^6 cm/V s at a density of 6.4×10^10 cm^−2 measured at 0.3 K either in the dark, or during, or after, exposure to light. This mobility is an order of magnitude improvement over previous work on multiwells.
| Item Type: | Article |
|---|---|
| Additional Information: | © 1992 American Institute of Physics. Received 12 February 1992; accepted 8 July 1992. |
| Subject Keywords: | GALLIUM ARSENIDES, ALUMINUM ARSENIDES, QUANTUM WELL STRUCTURES, CRYSTAL DOPING, DOPED MATERIALS, DELTA FUNCTION, SILICON ADDITIONS, ELECTRON MOBILITY, PHYSICAL RADIATION EFFECTS, PHOTONS, MOLECULAR BEAM EPITAXY |
| Record Number: | CaltechAUTHORS:PFEapl92 |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:PFEapl92 |
| Related URLs: | |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 12018 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Tony Diaz |
| Deposited On: | 23 Oct 2008 15:37 |
| Last Modified: | 26 Dec 2012 10:25 |
Repository Staff Only: item control page
