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In situ real-time analysis of alloy film composition and segregation dynamics with parallel detection reflection electron energy loss spectroscopy

Ahn, C. C. and Yoshino, H. and Tambo, T. and Wong, S. S. and He, G. and Taylor, M. E. and Atwater, H. A. (1997) In situ real-time analysis of alloy film composition and segregation dynamics with parallel detection reflection electron energy loss spectroscopy. Applied Physics Letters, 71 (18). pp. 2653-2655. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:AHNapl97

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Abstract

Real-time measurements of GexSi1 – x/Si(001) composition and segregation dynamics in Sn/Si(001) in molecular beam epitaxy are demonstrated using parallel detection reflection electron energy loss spectroscopy. Parallel detection enables quantitative acquisition of low-loss spectra in a time of < 500 µs and surface composition determination in GexSi1 – x/Si(001) via Ge L2,3 core loss analysis to a precision of approximately 2% in time of order 1 s. Segregation and trapping kinetics of monolayer thickness Sn films during Si epitaxy on Sn-covered Si(100) has also been studied using the Sn M4.5 core loss.


Item Type:Article
Additional Information:©1997 American Institute of Physics (Received 15 July 1997; accepted 9 September 1997) This work was supported by the National Science Foundation (Grant Nos. DMR-9202587 and DMR-9503210).
Record Number:CaltechAUTHORS:AHNapl97
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:AHNapl97
Alternative URL:http://dx.doi.org/10.1063/1.120136
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1206
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:04 Jan 2006
Last Modified:26 Dec 2012 08:43

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