Ahn, C. C. and Yoshino, H. and Tambo, T. and Wong, S. S. and He, G. and Taylor, M. E. and Atwater, H. A. (1997) In situ real-time analysis of alloy film composition and segregation dynamics with parallel detection reflection electron energy loss spectroscopy. Applied Physics Letters, 71 (18). pp. 2653-2655. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:AHNapl97
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Real-time measurements of GexSi1 – x/Si(001) composition and segregation dynamics in Sn/Si(001) in molecular beam epitaxy are demonstrated using parallel detection reflection electron energy loss spectroscopy. Parallel detection enables quantitative acquisition of low-loss spectra in a time of < 500 µs and surface composition determination in GexSi1 – x/Si(001) via Ge L2,3 core loss analysis to a precision of approximately 2% in time of order 1 s. Segregation and trapping kinetics of monolayer thickness Sn films during Si epitaxy on Sn-covered Si(100) has also been studied using the Sn M4.5 core loss.
|Additional Information:||©1997 American Institute of Physics (Received 15 July 1997; accepted 9 September 1997) This work was supported by the National Science Foundation (Grant Nos. DMR-9202587 and DMR-9503210).|
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|Deposited On:||04 Jan 2006|
|Last Modified:||26 Dec 2012 08:43|
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