Eng, L. E. and Chen, T. R. and Sanders, S. and Zhuang, Y. H. and Zhao, B. and Yariv, A. and Morkoç, H. (1989) Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxy. Applied Physics Letters, 55 (14). pp. 1378-1379. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:ENGapl89
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We report on low threshold current strained InGaAs/AlGaAs single quantum well lasers grown by molecular beam epitaxy. Broad-area threshold current densities of 114 A/cm2 at 990 nm were measured for 1540-µm-long lasers. Threshold currents of 2.4 mA at 950 nm were obtained for an uncoated buried-heterostructure device with a 2-µm-wide stripe and 425-µm-long cavity. With reflective coatings the best device showed 0.9 mA threshold current (L=225 µm). Preliminary modulation measurements show bandwidths up to 5.5 GHz limited by the detector response.
|Additional Information:||Copyright © 1989 American Institute of Physics. Received 12 June 1989; accepted 25 July 1989. We would like to acknowledge J. Paslaski for helpful discussions. This work was supported by the Office of Naval Research and the National Science Foundation. One of us (S.S.) acknowledges support from a National Science Foundation Graduate Fellowship.|
|Subject Keywords:||THRESHOLD CURRENT, SEMICONDUCTOR LASERS, MOLECULAR BEAM EPITAXY, FABRICATION, MODULATION, EXPERIMENTAL DATA, INDIUM ARSENIDES, GALLIUM ARSENIDES, HETEROJUNCTIONS, REFLECTIVE COATINGS, CURRENT DENSITY, LASER CAVITIES, BURIED LAYERS, BANDWIDTH, HETEROSTRUCTURES|
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|Deposited On:||23 Oct 2008 06:41|
|Last Modified:||26 Dec 2012 10:26|
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