Hauenstein, R. J. and Schlesinger, T. E. and McGill, T. C. and Hunt, B. D. and Schowalter, L. J. (1986) Summary Abstract: Schottky barrier height measurements of type A and type B NiSi2 on Si. Journal of Vacuum Science and Technology B, 4 (2). pp. 549-550. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:HAUjvstb86
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We have made photoresponse measurements of the Schottky barrier heights of epitaxial NiSi2 on non-degenerate n-(111) Si substrates, for the cases of type A and type B epitaxy, on several samples with NiSi2 layer thicknesses ranging from 70 to 600 Å. Nominal doping in all Si substrates was about 1.5 x 10^15 cm^-3. The photoresponse measurements were performed on broad-area-coverage regions of NiSi2 on Si. No processing subsequent to growth took place on these silicide layers.
|Additional Information:||© 1986 American Vacuum Society. Received 15 August 1985; accepted 6 December 1985. The authors wish to acknowledge the support of the Defense Advanced Research Projects Agency monitored by ONR under Contract No. N00014-84-C-0083.|
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|Deposited On:||28 Oct 2008 20:16|
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