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Strain relaxation kinetics in Si1–xGex/Si heterostructures

Hauenstein, R. J. and Clemens, B. M. and Miles, R. H. and Marsh, O. J. and Croke, E. T. and McGill, T. C. (1989) Strain relaxation kinetics in Si1–xGex/Si heterostructures. Journal of Vacuum Science and Technology B, 7 (4). pp. 767-774. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:HAUjvstb89

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Abstract

Strain relaxation in Si1–xGex/Si superlattices and alloy films is studied as a function of ex situ anneal treatment with the use of x-ray diffraction and Raman spectroscopy. Samples are grown by molecular-beam epitaxy at an unusually low temperature (≈365 °C). This results in metastably strained alloy and superlattice films significantly in excess of critical thicknesses previously reported for such structures. Significant strain relaxation is observed upon anneal at temperatures as low as 390 °C. After a 700 °C, 2 h anneal, superlattices are observed to relax less fully (~43% of coherent strain) than corresponding alloys (~84% of coherent strain). Also, the strain relaxation kinetics of a Si1–xGex alloy layer is studied quantitatively. Alloy strain relaxation is approximately described by a single, thermally activated, first order kinetic process having activation energy Ea=2.0 eV. The relevance of our results to the microscopic mechanisms responsible for strain relaxation in lattice-mismatched semiconductor heterostructures is discussed.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.584598DOIUNSPECIFIED
Additional Information:© 1989 American Vacuum Society. Received 28 February 1989; accepted 4 April 1989. The authors acknowledge Dr. A.T. Hunter for invaluable assistance in setting up the Raman spectroscopy measurement. Also, the technical assistance of K.T. Miller, D.J. O'Connor, and C. Haeussler is gratefully acknowledged. We wish to thank Dr. P.P. Chow of Perkin-Elmer, PHI, for supplying one of the samples used in this study (sample SL3). In addition, we have benefited from helpful technical discussions with Dr. C.W. Nieh. Finally, two of us (E.T.C. and T.C.M.) wish to acknowledge the partial support of the Defense Advanced Research Projects Agency monitored by the Office of Naval Research under Contract No. N00014-84- C-0083.
Funders:
Funding AgencyGrant Number
Defense Advanced Research Projects AgencyUNSPECIFIED
Office of Naval ResearchN00014-84-C-0083
Subject Keywords:SILICON ALLOYS, GERMANIUM ALLOYS, SILICON, INTERFACES, HETEROSTRUCTURES, INTERFACE STRUCTURE, STRAINS, STRESS RELAXATION, ANNEALING, X–RAY DIFFRACTION, RAMAN SPECTROSCOPY, MOLECULAR BEAM EPITAXY, SUPERLATTICES, TEMPERATURE DEPENDENCE, MEDIUM TEMPERATURE
Record Number:CaltechAUTHORS:HAUjvstb89
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:HAUjvstb89
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ID Code:12192
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:28 Oct 2008 20:30
Last Modified:26 Dec 2012 10:28

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