Hauenstein, R. J. and Schlesinger, T. E. and McGill, T. C. and Hunt, B. D. and Schowalter, L. J. (1986) Schottky barrier height measurements of type-A and type-B NiSi2 epilayers on Si. Journal of Vacuum Science and Technology A, 4 (3). pp. 860-864. ISSN 0734-2101. http://resolver.caltech.edu/CaltechAUTHORS:HAUjvsta86
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Schottky barrier heights of single-crystal type-A and type-B NiSi2 epilayers on nondegenerate n-(111) Si have been measured by photoresponse and forward I–V methods. High-quality molecular beam epitaxy grown NiSi2 layers of thicknesses ranging from 70 to 600 Å on sputter-cleaned, P-doped Si subtrates (~ 1.5 × 1015 cm – 3) were studied. The type-A and type-B orientations consistently yield photoresponse barrier heights which differ by greater than 0.1 eV. We observe the value phi Bn=0.62 ± 0.01 eV for all type-A structures from both photoresponse and I–V measurements. However, we obtain a discrepancy between barrier heights measured by I–V (phi Bn=0.69 ± 0.01 eV) and photoresponse (phi Bn=0.77 ± 0.05 eV) methods, and in addition consistently observe an unusual bowing of the type-B photoresponse curves at low photon energies. We show that both the detailed shape of the type-B photoresponse curves and the discrepancy between I–V and photoresponse-measured barrier heights can be accounted for by modeling the type-B barrier as a mixture of high and low barrier regions. Quantitative agreement with experiment is obtained for the values phi hi =0.81 ± 0.01 eV and phi lo 0.64 ± 0.01 eV, with effective fractional area coverages of 91% and 9% for high- and low-barrier regions, respectively.
|Additional Information:||© 1986 American Vacuum Society. Received 20 November 1985; accepted 31 January 1986. The authors wish to acknowledge the support of the Defense Advanced Research Projects Agency monitored by ONR under Contract No. N00014-84-C-0083. One of us (R.J.H.) received financial support from IBM and another one of us (T.E.S.) from GTE. We also wish to thank Masako Okamoto and Professor W.M. Gibson from SUNY Albany for ion channeling RBS measurements. Dr. E.L. Han and N. Lewis of the GE Crop. R&D Center are also gratefully acknowleged for their TEM work on these samples. Finally, the expert technical assistance of L. Turner in operating the MBE system is acknowleged.|
|Subject Keywords:||BARRIER HEIGHT, IV CHARACTERISTIC, METAL –SEMICONDUCTOR CONTACTS, SCHOTTKY BARRIER DIODES, THICKNESS, MOLECULAR BEAM EPITAXY, SILICON, NICKEL SILICIDES, PHOTOVOLTAIC EFFECT, PHOTOCONDUCTIVITY|
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|Deposited On:||28 Oct 2008 21:53|
|Last Modified:||26 Dec 2012 10:28|
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