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Local order measurement in SnGe alloys and monolayer Sn films on Si with reflection electron energy loss spectrometry

Wong, Selmer S. and He, Gang and Nikzad, Shouleh and Ahn, Channing C. and Atwater, Harry A. (1995) Local order measurement in SnGe alloys and monolayer Sn films on Si with reflection electron energy loss spectrometry. Journal of the Vacuum Society of America A, 13 (2). pp. 216-220. ISSN 0734-2101. http://resolver.caltech.edu/CaltechAUTHORS:WONjvsta95

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Abstract

Measurements of local order are demonstrated in Sn-containing alloys and epitaxial monolayer thickness films by analysis of extended-edge energy loss fine structure (EXELFS) data obtained by reflection electron energy loss spectrometry (REELS). These measurements of short-range order provide a complement to the chemical information obtained with REELS and long-range order obtained using reflection high energy electron diffraction. The results suggest that EXELFS measurements are practical for samples mounted on the growth manipulator in a molecular beam epitaxy chamber. Advantages and limitations of reflection EXELFS are discussed.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.579401DOIUNSPECIFIED
Additional Information:© 1995 American Vacuum Society. Received 28 March 1994; accepted 12 November 1994. This work was supported by the National Science Foundation (DMR-9202587).
Funders:
Funding AgencyGrant Number
National Science FoundationDMR-9202587
Subject Keywords:SILICON, TIN, BINARY ALLOYS, TIN ALLOYS, GERMANIUM ALLOYS, MONOLAYERS, SHORT–RANGE ORDER, EEL SPECTROSCOPY, REFLECTION
Record Number:CaltechAUTHORS:WONjvsta95
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:WONjvsta95
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:12212
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:29 Oct 2008 06:02
Last Modified:26 Dec 2012 10:28

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