Kao, Y. C. and Wang, K. L. and de Fresart, E. and Hull, R. and Bai, G. and Jamieson, D. and Nicolet, M-A. (1987) Study of CoSi2/Si strained layers grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B, 5 (3). pp. 745-748. ISSN 1071-1023 http://resolver.caltech.edu/CaltechAUTHORS:KAOjvstb87
- Published Version
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:KAOjvstb87
In this paper, we report a study of the strain and its relaxation of epitaxial CoSi2 grown on Si by molecular beam epitaxy (MBE). The strain is measured by a x-ray rocking curve technique and misfit dislocations are determined by transmission electron microscopy (TEM) as the strain relaxes. Results show that the critical thickness of pseudomorphic growth is about 30 nm for growth temperature of 550 °C although there is still a residual strain remained for the thicker films. No apparent complete relaxation of the strain is obtained. Thermal annealing of CoSi2 films is performed and the results of the strain relaxation are discussed.
|Additional Information:||© 1987 American Vacuum Society. Received 21 October 1986; accepted 5 January 1987. This work is supported in part by the US Army Research Office and by the Semiconductor Research Corporation.|
|Subject Keywords:||STRAINS, MOLECULAR BEAM EPITAXY, RELAXATION, COBALT SILICIDES, THICKNESS, FILM GROWTH, ANNEALING, TRANSMISSION ELECTRON MICROSCOPY|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||29 Oct 2008 23:05|
|Last Modified:||26 Dec 2012 10:29|
Repository Staff Only: item control page