Katz, J. and Margalit, S. and Yariv, A. (1983) Diffraction coupled phase-locked semiconductor laser array. Applied Physics Letters, 42 (7). pp. 554-556. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:KATapl83a
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A new monolithic, diffraction coupled phase-locked semiconductor laser array has been fabricated. Stable narrow far-field patterns (~3°) and peak power levels of 1 W have been obtained for 100-µm-wide devices with threshold currents as low as 250 mA. Such devices may be useful in applications where high power levels and stable radiation patterns are needed.
|Additional Information:||Copyright © 1983 American Institute of Physics. Received 6 December 1982; accepted 10 January 1983. The research reported in this paper was carried out by the Jet Propulsion Laboratory, California Institute of Technology, under contract with the National Aeronautics and Space Administration. A portion of this research was sponsored by the Office of Naval Research and the National Science Foundation.|
|Subject Keywords:||semiconductor lasers, diffraction, coupling, images, size, threshold current, stability, fabrication|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||12 Nov 2008 06:20|
|Last Modified:||26 Dec 2012 10:30|
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