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Single-growth embedded epitaxy AlGaAs injection lasers with extremely low threshold currents

Katz, J. and Margalit, S. and Wilt, D. and Chen, P. C. and Yariv, A. (1980) Single-growth embedded epitaxy AlGaAs injection lasers with extremely low threshold currents. Applied Physics Letters, 37 (11). pp. 987-989. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:KATapl80b

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Abstract

A new type of strip-geometry AlGaAs double-heterostructure laser with an embedded optical waveguide has been developed. The new structure is fabricated using a single step of epitaxial growth. Lasers with threshold currents as low as 9.5 mA (150 µm long) were obtained. These lasers exhibit operation in a single spatial and longitudinal mode, have differential quantum efficiencies exceeding 45%, and a characteristic temperature of 175° C. They emit more than 12 mW/facet of optical power without any kinks.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.91743DOIUNSPECIFIED
http://link.aip.org/link/?APPLAB/37/987/1PublisherUNSPECIFIED
Additional Information:Copyright © 1980 American Institute of Physics. Received 25 August 1980; accepted for publication 25 September 1980. This research was supported by the National Science Foundation and the Office of Naval Research under the Optical Communication Program.
Funders:
Funding AgencyGrant Number
National Science FoundationUNSPECIFIED
Office of Naval ResearchUNSPECIFIED
Subject Keywords:SEMICONDUCTOR LASERS, CRYSTAL GROWTH, ELECTRIC CURRENTS, EPITAXY, GALLIUM ARSENIDES, ALUMINIUM ARSENIDES, WAVEGUIDES, FABRICATION, OSCILLATION MODES, EFFICIENCY, HIGH TEMPERATURE
Record Number:CaltechAUTHORS:KATapl80b
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:KATapl80b
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:12341
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:12 Nov 2008 06:45
Last Modified:26 Dec 2012 10:30

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