Katz, J. and Margalit, S. and Wilt, D. and Chen, P. C. and Yariv, A. (1980) Single-growth embedded epitaxy AlGaAs injection lasers with extremely low threshold currents. Applied Physics Letters, 37 (11). pp. 987-989. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:KATapl80b
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A new type of strip-geometry AlGaAs double-heterostructure laser with an embedded optical waveguide has been developed. The new structure is fabricated using a single step of epitaxial growth. Lasers with threshold currents as low as 9.5 mA (150 µm long) were obtained. These lasers exhibit operation in a single spatial and longitudinal mode, have differential quantum efficiencies exceeding 45%, and a characteristic temperature of 175° C. They emit more than 12 mW/facet of optical power without any kinks.
|Additional Information:||Copyright © 1980 American Institute of Physics. Received 25 August 1980; accepted for publication 25 September 1980. This research was supported by the National Science Foundation and the Office of Naval Research under the Optical Communication Program.|
|Subject Keywords:||SEMICONDUCTOR LASERS, CRYSTAL GROWTH, ELECTRIC CURRENTS, EPITAXY, GALLIUM ARSENIDES, ALUMINIUM ARSENIDES, WAVEGUIDES, FABRICATION, OSCILLATION MODES, EFFICIENCY, HIGH TEMPERATURE|
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|Deposited On:||12 Nov 2008 06:45|
|Last Modified:||26 Dec 2012 10:30|
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