Katz, J. and Bar-Chaim, N. and Margalit, S. and Yariv, A. (1980) Large optical cavity AlGaAs injection lasers with multiple active regions. Journal of Applied Physics, 51 (8). pp. 4038-4041. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:KATjap80
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A new type of AlGaAs injection laser is described. The structure consists of alternating p- and n-type layers of GaAs and AlxGa1−xAs . The electrical mode of operation of the device is that of a Shockley diode (SCR). Optically the device operates as a large optical cavity. Single transverse mode operation was observed with optical cavities larger than 4 µm.
|Additional Information:||Copyright © 1980 American Institute of Physics. Received 21 January 1980; accepted for publication 21 April 1980. One of the authors (JK) thanks the Northrop Foundation for their financial support. This research was supported by the Office of Naval Research and the National Science Foundation. A portion of this research was sponsored by the National Aeronautics and Space Administration under Contract NAS 7-100.|
|Subject Keywords:||SEMICONDUCTOR LASERS, LASER CAVITIES, ALUMINUM COMPOUNDS, GALLIUM ARSENIDES, P−TYPE CONDUCTORS, N−TYPE CONDUCTORS, LAYERS, SEMICONDUCTOR DIODES, DATA, OSCILLATION MODES|
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|Deposited On:||12 Nov 2008 07:22|
|Last Modified:||26 Dec 2012 10:30|
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