CaltechAUTHORS
  A Caltech Library Service

Proton-implanted optical waveguide detectors in GaAs

Stoll, H. and Yariv, A. and Hunsperger, R. G. and Tangonan, G. L. (1973) Proton-implanted optical waveguide detectors in GaAs. Applied Physics Letters, 23 (12). pp. 664-665. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:STOapl73

[img]
Preview
PDF - Published Version
See Usage Policy.

153Kb

Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:STOapl73

Abstract

Defect levels introduced by implanting GaAs with high-energy protons give rise to optical absorption at wavelengths greater than that of the normal absorption edge at 0.9 µ. Optical waveguide detectors may be fabricated by taking advantage of this absorption mechanism in the presence of a Schottky barrier depletion layer. Detector response times less than 200 ns and external quantum efficiencies of 16% have been observed.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.1654783DOIUNSPECIFIED
http://link.aip.org/link/?APPLAB/23/664/1PublisherUNSPECIFIED
Additional Information:© 1973 American Institute of Physics. Received 17 August 1973. The authors would like to thank Dr. W.C. Holton of Texas Instruments for providing the epitaxial GaAs material.
Record Number:CaltechAUTHORS:STOapl73
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:STOapl73
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:12380
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:14 Nov 2008 07:41
Last Modified:26 Dec 2012 10:31

Repository Staff Only: item control page