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Palladium silicide formation under the influence of nitrogen and oxygen impurities

Ho, K. T. and Lien, C. D. and Nicolet, M-A. (1985) Palladium silicide formation under the influence of nitrogen and oxygen impurities. Journal of Applied Physics, 57 (2). pp. 232-236. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:HOKjap85a

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Abstract

The effect of impurities on the growth of the Pd2Si layer upon thermal annealing of a Pd film on <100> and amorphous Si substrates is investigated. Nitrogen and oxygen impurities are introduced into either Pd or Si which are subsequently annealed to form Pd2Si. The complementary techniques of Rutherford backscattering spectrometry, and 15N(p,alpha)12C or 18O(p,alpha)15N nuclear reaction, are used to investigate the behavior of nitrogen or oxygen and the alterations each creates during silicide formation. Both nitrogen and oxygen retard the silicide growth rate if initially present in Si. When they are initially in Pd, there is no significant retardation; instead, an interesting "snow-plowing" effect of N or O by the reaction interface of Pd2Si is observed. By using N implanted into Si as a marker, Pd and Si appear to trade roles as the moving species, when the silicide front reaches the nitrogen-rich region.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.334794DOIUNSPECIFIED
http://link.aip.org/link/?JAPIAU/57/232/1PublisherUNSPECIFIED
Additional Information:Copyright © 1985 American Institute of Physics. Received 13 June 1984; accepted 1 August 1984. The authors would like to acknowledge Ali Ghaffari for technical assistance. The implanter part of this study was financially supported by the U.S. Department of Energy through an agreement with the National Aeronautics and Space Administration and monitored by the Jet Propulsion Laboratory, California Institute of Technology (D. Burger).
Funders:
Funding AgencyGrant Number
Department of EnergyUNSPECIFIED
NASAUNSPECIFIED
Subject Keywords:RBS, PALLADIUM SILICIDES, IMPURITIES, ANNEALING, PALLADIUM, AMORPHOUS STATE, SILICON, CRYSTAL GROWTH, PROTON REACTIONS, KNOCK−OUT REACTIONS, SELF−DIFFUSION, SYNTHESIS, NITROGEN, NITRIDATION
Record Number:CaltechAUTHORS:HOKjap85a
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:HOKjap85a
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:12600
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:15 Dec 2008 17:57
Last Modified:26 Dec 2012 10:36

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