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Current approaches to pn junctions in wider band gap II–VI semiconductors

McCaldin, J. O. (1990) Current approaches to pn junctions in wider band gap II–VI semiconductors. Journal of Vacuum Science and Technology A, 8 (2). pp. 1188-1193. ISSN 0734-2101. http://resolver.caltech.edu/CaltechAUTHORS:MCCjvsta90

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Abstract

Long-standing problems to make junctions in wider band gap semiconductors, especially II–VIs, are being restudied today by new low-temperature epitaxial growth methods, which may lead to current-injecting devices suited to light emission. This paper reviews various approaches briefly, with particular emphasis on heterojunctions and methods to control dopants. A few of the many possible heterojunctions are favored by small offset barriers, but are not without other problems. New dopants, besides the much-studied Li, are being introduced in new ways, in the effort to attain reproducibility and stability.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.576943DOIUNSPECIFIED
Additional Information:© 1990 American Vacuum Society. Received 18 September 1989; accepted 10 November 1989.
Subject Keywords:JUNCTIONS, II–VI SEMICONDUCTORS, EPITAXIAL LAYERS, HETEROJUNCTIONS, DOPED MATERIALS
Record Number:CaltechAUTHORS:MCCjvsta90
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:MCCjvsta90
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:12679
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:19 Dec 2008 06:14
Last Modified:26 Dec 2012 10:38

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