McCaldin, J. O. (1990) Current approaches to pn junctions in wider band gap II–VI semiconductors. Journal of Vacuum Science and Technology A, 8 (2). pp. 1188-1193. ISSN 0734-2101. http://resolver.caltech.edu/CaltechAUTHORS:MCCjvsta90
- Published Version
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:MCCjvsta90
Long-standing problems to make junctions in wider band gap semiconductors, especially II–VIs, are being restudied today by new low-temperature epitaxial growth methods, which may lead to current-injecting devices suited to light emission. This paper reviews various approaches briefly, with particular emphasis on heterojunctions and methods to control dopants. A few of the many possible heterojunctions are favored by small offset barriers, but are not without other problems. New dopants, besides the much-studied Li, are being introduced in new ways, in the effort to attain reproducibility and stability.
|Additional Information:||© 1990 American Vacuum Society. Received 18 September 1989; accepted 10 November 1989.|
|Subject Keywords:||JUNCTIONS, II–VI SEMICONDUCTORS, EPITAXIAL LAYERS, HETEROJUNCTIONS, DOPED MATERIALS|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||19 Dec 2008 06:14|
|Last Modified:||26 Dec 2012 10:38|
Repository Staff Only: item control page