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Proposal of a new visible light emitting structure: n-AlSb/p-ZnTe heterojunctions

McCaldin, J. O. and McGill, T. C. (1988) Proposal of a new visible light emitting structure: n-AlSb/p-ZnTe heterojunctions. Journal of Vacuum Science and Technology B, 6 (4). pp. 1360-1363. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:MCCjvstb88

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Abstract

From considerations of dopability, band offset, and lattice match, we find that of the various heterojunctions containing II–VI compounds, the n-AlSb/p-ZnTe heterojunction has the most promising properties for fabricating visible light emitters. The materials lattice match to 0.5%. Experimental evidence and theoretical predictions for the band offset blocking minority carrier injection indicate a range from zero to 0.3 eV maximum. This range of values is the lowest for heterojunctions involving wide-gap II–VI's. Substantial electron injection into the p-ZnTe should be possible. Control of doping may suffice to suppress undesired hole current originating in the ZnTe.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1116/1.584221DOIUNSPECIFIED
Additional Information:© 1988 American Vacuum Society. Received 3 February 1988; accepted 4 May 1988. The support of the Defense Research Projects Agency under Contract No. N00014-86-K-0841 is gratefully acknowledged.
Funders:
Funding AgencyGrant Number
Defense Advanced Research Projects AgencyN00014-86-K-0841
Subject Keywords:ELECTROLUMINESCENCE, HETEROJUNCTIONS, ALUMINUM ANTIMONIDES, ZINC TELLURIDES, CRYSTAL DOPING, MINORITY CARRIERS, BAND STRUCTURE
Record Number:CaltechAUTHORS:MCCjvstb88
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:MCCjvstb88
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:12680
Collection:CaltechAUTHORS
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Deposited On:19 Dec 2008 06:24
Last Modified:26 Dec 2012 10:38

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