McCaldin, J. O. and Wittry, D. B. (1961) Germanium Saturated with Gallium Antimonide. Journal of Applied Physics, 32 (1). pp. 65-69. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:MCCjap61
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Single crystals of Ge saturated with GaSb were prepared by temperature gradient zone melting at 750°C. Electron probe microanalysis indicated 4.83×10^20 Ga atoms and 2.36×10^20 Sb atoms/cc in the saturated material with an estimated error of about 10%. Thus the solubility of Sb is greatly enhanced by the presence of Ga, though the reverse is not true. Hall measurements were in semiquantitative agreement with the chemical concentration measurements and indicated that carrier mobility is not much affected by the presence of the compensating impurity.
|Additional Information:||© 1961 The American Institute of Physics. Received August 26, 1960. The authors wish to thank E.O. Kane for advice concerning band theory and H. Winston for a reading of the manuscript. The authors are grateful to Professor Pol Duwez of the California Institute of Technology for permission to use the electron probe microanalyzer which was constructed under the sponsorship of the Office of Ordnance Research, U.S. Army. Thanks are also due to R. Mathis, G. Cwierz, and J. Healy for assistance with the experiments and R. Wright for the spectrographic measurements.|
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