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Solubility Interactions in Compensated, Heavily Doped Germanium

McCaldin, J. O. (1965) Solubility Interactions in Compensated, Heavily Doped Germanium. Journal of Applied Physics, 36 (1). pp. 211-213. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:MCCjap65

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Abstract

The solubility of the two donors, arsenic and antimony, in Ge at 870°C was enhanced by the acceptor dopant Ga at concentrations ≥ 10^19 cm^–3. The observed enhancement is in agreement with theory of the dopant-carrier ionization equilibrium in the Boltzmann approximation and confirms the requirement of the theory that the solubility enhancement depend only on the net carrier concentration and not on the chemical identity of the donor. A contrary result would have been likely, if donor-acceptor complexes played an important role in these solubility effects. The experimentally determined intrinsic carrier concentration at 870°C is ni = 1.8 × 10^19 cm^–3 compared to the extrapolated Hall value of ni ~1.3 × 10^19 cm^–3. The indicated extrinsic behavior implies that p-n junctions persist in very heavily doped germanium to the melting point.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.1713878DOIUNSPECIFIED
http://link.aip.org/link/?JAPIAU/36/211/1PublisherUNSPECIFIED
Additional Information:© 1965 The American Institute of Physics. Received 18 July 1964. The experiments described in this paper were performed while the author was at Hughes Research Laboratories.
Record Number:CaltechAUTHORS:MCCjap65
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:MCCjap65
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ID Code:12685
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Deposited On:19 Dec 2008 07:56
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