Lim, B. S. and Ma, E. and Nicolet, M-A. and Nathan, M. (1988) Silicon resistor to measure temperature during rapid thermal annealing. Review of Scientific Instruments, 59 (1). pp. 182-183. ISSN 0034-6748. http://resolver.caltech.edu/CaltechAUTHORS:LIMrsi88
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A resistor composed of a piece of Si wafer and two thin silver wires attached to it, can reliably sense the temperature during rapid thermal annealing (RTA). As constant electric current passes through the Si piece, the resistivity change of Si with temperature produces a voltage signal that can be readily calibrated and converted to an actual temperature of the samples. An accuracy better than ±10 °C is achieved between 300° and 600 °C.
|Additional Information:||Copyright © 1988 American Institute of Physics. Received 22 December 1986; accepted 2 September 1987. The authors thank R. Gorris and G. Mendenilla for technical assistance. Financial support from the National Science Foundation-Materials Research Group under Contract No. DMR-842119 is gratefully acknowledged. One of the authors, B.S. Lim, would like to acknowledge partial financial support from the Korean Science and Engineering Foundation.|
|Subject Keywords:||RESISTORS, TEMPERATURE MEASUREMENT, SILICON, THERMAL CYCLING, ANNEALING, RESISTANCE THERMOMETERS, DESIGN, PERFORMANCE, THERMOCOUPLES, ELECTRIC CONDUCTIVITY, THERMOELECTRIC PROPERTIES|
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|Deposited On:||15 Jan 2009 23:19|
|Last Modified:||26 Dec 2012 10:43|
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