Hwu, R. J. and Sadwick, P. and Luhmann, Jr., N. C. and Rutledge, D. B. (1988) DC and millimeter-wave performance of watt-level barrier-intrinsic-n+ diode-grid frequency multiplier fabricated on III-V compound semiconductors. In: International Electron Devices Meeting (IEDM '88), Technical Digest, San Francisco, CA, 11-14 December 1988. IEEE , Piscataway, NJ, pp. 191-194. http://resolver.caltech.edu/CaltechAUTHORS:HWUiedm88
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This paper reports the fabrication and millimeter-wave performance of a new class of monolithic metal-semiconductor heterostructure devices, the Barrier- Intrinsic-N+ (BIN) diode-grid frequency multipliers, which are fabricated on III-V compound semiconductors. This work also involves the measurement of the DC and low frequency electrical properties of the BIN diode-grid frequency multiplier. In addition, a new analytical model which accurately describes the structure has been developed and is presented for the first time.
|Item Type:||Book Section|
|Additional Information:||© Copyright 1988 IEEE. Reprinted with permission. Meeting Date: 12/11/1988 - 12/14/1988.|
|Subject Keywords:||III-V semiconductors; Schottky-barrier diodes; frequency multipliers; gallium arsenide; semiconductor device models; solid-state microwave devices; 90 to 180 GHz; DC performance; GaAs; III-V compound semiconductors; analytical model; barrier-intrinsic-n+ diode-grid frequency multiplier; low-frequency electrical properties; millimeter-wave performance; monolithic metal-semiconductor heterostructure devices; watt level CW output power|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Kristin Buxton|
|Deposited On:||21 Jan 2009 00:08|
|Last Modified:||26 Dec 2012 10:44|
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