Hwu, R. J. and Jou, C. F. and Lam, W. W. and Lieneweg, U. and Streit, D. C. and Luhmann, N. C., Jr. and Maserjian, J. and Rutledge, D. B. (1988) Watt-level millimeter-wave monolithic diode-grid frequency multipliers. In: IEEE MTT-S International Microwave Symposium Digest, New York, 25-27 May 1988. IEEE , Piscataway, NJ, pp. 533-536. http://resolver.caltech.edu/CaltechAUTHORS:HWUims88
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Monolithic planar arrays containing in excess of 1000 Schottky diodes have produced watt level output at 66 GHz in a doubler configuration in excellent agreement with large signal predictions of the frequency multiplication. Current efforts are concentrated on fabricating and developing arrays of novel barrier-intrinsic-N+ (BIN) diode which promise increased performance in tripler and quintupler configurations.
|Item Type:||Book Section|
|Additional Information:||© Copyright 1988 IEEE. Reprinted with permission. Publication Date: 25-27 May 1988. This work was supported by TRW under the California MICRO program.|
|Subject Keywords:||Schottky-barrier diodes; frequency multipliers; microwave integrated circuits; monolithic integrated circuits; varactors; BW diode structure; GaAs wafers; mm-wave devices; MMIC; MOS structure; Schottky diode grids; barrier intrinsic n+ diode structure; equivalent circuit model; frequency multipliers; heavily-doped substrate; microwave IC; millimeter-wave; monolithic diode-grid; plane-wave illumination; pulsed source pumping; pump power; quasioptical tripler design; quasioptical varactor; thin oxide layer; transmission-line analysis; undoped epitaxial layer; watt level devices; watt-level continuous-wave power|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Kristin Buxton|
|Deposited On:||03 Feb 2009 18:01|
|Last Modified:||26 Dec 2012 10:46|
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