Goodwin, D. G. (1993) Scaling laws for diamond chemical-vapor deposition. I. Diamond surface chemistry. Journal of Applied Physics, 74 (11). pp. 6888-6894. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:GOOjap93a
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A simplified model of the gas-surface chemistry occurring during chemical-vapor deposition of diamond thin films is presented. The model results in simple scaling relations, useful for process scale-up and optimization, for growth rate and defect density in terms of the local chemical environment at the substrate. A simple two-parameter expression for growth rate is obtained, which with suitable parameter choices reproduces the results of more detailed mechanisms and experiment over two orders of magnitude in growth rate. The defect formation model suggests that the achievable growth rate at specified defect density scales approximately quadratically with the atomic hydrogen concentration at the substrate.
|Additional Information:||Copyright © 1993 American Institute of Physics (Received 14 June 1993; accepted 21 August 1993) The author would like to thank Dr. Steve Harris, Dr. Lev Krasnoperov, and Dr. Mark Cappelli for providing copies of their work prior to publication. This work is supported, in part, by the National Science Foundation, the Office of Naval Research, and the Naval Research Laboratory.|
|Subject Keywords:||DIAMONDS; CVD; SURFACE REACTIONS; CHEMICAL REACTIONS; SCALING LAWS; GROWTH RATE; THIN FILMS; DEFECTS; HYDROGEN|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||17 Jan 2006|
|Last Modified:||26 Dec 2012 08:44|
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