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Scaling laws for diamond chemical-vapor deposition. II. Atomic hydrogen transport

Goodwin, D. G. (1993) Scaling laws for diamond chemical-vapor deposition. II. Atomic hydrogen transport. Journal of Applied Physics, 74 (11). pp. 6895-6906. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:GOOjap93b

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Abstract

Scaling relations are developed to allow estimation of the atomic hydrogen concentration at the substrate during diamond chemical-vapor deposition for both diffusion-dominated and convection-dominated reactors. In the convection-dominated case, it is shown that there exists an optimal Mach number which maximizes the H concentration delivered to the substrate. In addition, when homogeneous recombination is taken into account, there exists an optimal operating pressure. This analysis shows that a sonic flow of highly dissociated hydrogen at a pressure near atmospheric is optimal for rapid growth of high-quality diamond.


Item Type:Article
Additional Information:Copyright © 1993 American Institute of Physics (Received 14 June 1993; accepted 31 July 1993) Helpful discussions with C. Brennen, A. Acosta, R. Sabersky, N. Glumac, and S. Harris are greatly appreciated. This work is supported, in part, by the National Science Foundation, the Office of Naval Research, and the Naval Research Laboratory.
Subject Keywords:DIAMONDS; THIN FILMS; CVD; SCALING LAWS; HYDROGEN; TRANSPORT PROCESSES; CONVECTION; MACH NUMBER; PRESSURE DEPENDENCE; FILM GROWTH
Record Number:CaltechAUTHORS:GOOjap93b
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:GOOjap93b
Alternative URL:http://dx.doi.org/10.1063/1.355064
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1408
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:17 Jan 2006
Last Modified:26 Dec 2012 08:44

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