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Fast nonlinear ion transport via field-induced hydrodynamic slip in sub-20-nm hydrophilic nanofluidic transistors

Vermesh, Udi and Choi, Jang Wook and Vermesh, Ophir and Fan, Rong and Nagarah, John and Heath, James R. (2009) Fast nonlinear ion transport via field-induced hydrodynamic slip in sub-20-nm hydrophilic nanofluidic transistors. Nano Letters, 9 (4). pp. 1315-1319. ISSN 1530-6984 http://resolver.caltech.edu/CaltechAUTHORS:20090702-082701926

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Abstract

Electrolyte transport through an array of 20 nm wide, 20 μm long SiO_2 nanofluidic transistors is described. At sufficiently low ionic strength, the Debye screening length exceeds the channel width, and ion transport is limited by the negatively charged channel surfaces. At source−drain biases >5 V, the current exhibits a sharp, nonlinear increase, with a 20−50-fold conductance enhancement. This behavior is attributed to a breakdown of the zero-slip condition. Implications for energy conversion devices are discussed.


Item Type:Article
Additional Information:© 2009 American Chemical Society. Received September 25, 2008; Revised Manuscript Received January 9, 2009. Publication Date (Web): March 5, 2009. This work was funded by the Department of Energy (DE-FG02-04ER46175) and by a subcontract from the MITRE Corporation. U.V. acknowledges a Betty and Gordon Moore fellowship. J.W.C. acknowledges the Samsung Scholarship.
Funders:
Funding AgencyGrant Number
Department of EnergyDE-FG02-04ER46175
MITRE CorporationUNSPECIFIED
Gordon and Betty Moore FoundationUNSPECIFIED
SamsungUNSPECIFIED
Record Number:CaltechAUTHORS:20090702-082701926
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20090702-082701926
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ID Code:14481
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:12 Aug 2009 18:04
Last Modified:26 Dec 2012 11:03

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