Narui, Yoshie and Ceres, Donato M. and Chen, Jinyu and Giapis, Konstantinos P. and Collier, C. Patrick (2009) High aspect ratio silicon dioxide-coated single-walled carbon nanotube scanning probe nanoelectrodes. Journal of Physical Chemistry C, 113 (16). pp. 6815-6820. ISSN 1932-7447 http://resolver.caltech.edu/CaltechAUTHORS:20090803-082921286
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Abstract
We have fabricated high aspect ratio, hydrophilic nanoelectrodes from individual single-walled carbon nanotubes (SWNTs) mounted on conductive atomic force microscope (AFM) tips for use as electrochemical probes. Individual SWNTs with an average diameter of 5 nm and up to 1.5 μm in length were passivated with nanometer-thick SiO_2 films, deposited conformally in an inductively coupled plasma reactor. The electrically insulating SiO_2 films improved the nanotube rigidity and stabilized the nanotube−AFM tip contact to enable use in aqueous environments. The nanotube tip was successfully exposed by subjecting the probe to nanosecond electrical pulse etching but only after electron beam irradiation in a transmission electron microscope (TEM). Probe functionality was verified by electrodepositing gold nanoparticles from aqueous solution only at the exposed tip.
| Item Type: | Article | ||||||
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| Additional Information: | © 2009 American Chemical Society. Received: February 5, 2009; Revised Manuscript Received: February 20, 2009. The authors thank Carol Garland for assistance with TEM imaging. Nicholas Brunelli provided invaluable expertise with the ICP reactor. This work was supported by Arrowhead Research and Intel Corporation. | ||||||
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| Record Number: | CaltechAUTHORS:20090803-082921286 | ||||||
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:20090803-082921286 | ||||||
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| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 14761 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Tony Diaz | ||||||
| Deposited On: | 05 Aug 2009 23:20 | ||||||
| Last Modified: | 26 Dec 2012 11:07 |
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