Painter, O. J. and Husain, A. and Scherer, A. and O'Brien, J. D. and Kim, I. and Dapkus, P. D. (1999) Room temperature photonic crystal defect lasers at near-infrared wavelengths in InGaAsP. Journal of Lightwave Technology, 17 (11). pp. 2082-2088. ISSN 0733-8724 http://resolver.caltech.edu/CaltechAUTHORS:PAIjlt99
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:PAIjlt99
Room temperature lasing from optically pumped single defects in a two-dimensional (2-D) photonic bandgap (PBG) crystal is demonstrated. The high-Q optical microcavities are formed by etching a triangular array of air holes into a half-wavelength thick multiquantum-well waveguide. Defects in the 2-D photonic crystal are used to support highly localized optical modes with volumes ranging from 2 to 3 (lambda/2n)(3). Lithographic tuning of the air hole radius and the lattice spacing are used to match the cavity wavelength to the quantum-well gain peak, as well as to increase the cavity Q. The defect lasers were pumped with 10-30 ns pulses of 0.4-1% duty cycle. The threshold pump power was 1.5 mW (approximate to 500 μW absorbed).
|Additional Information:||© Copyright 1999 IEEE. Reprinted with permission. Manuscript received July 28, 1999; revised August 27, 1999. This work was supported by the Army Research Office under Contracts DAAH04-96-1-0389 and DAAD19-99-1-0121, and the NSF under Contract ECS-9632937. O. J. Painter would like to thank K. Vahala and T. Yoshie for many helpful discussions and R. Johnson for his help in setting up the experimental apparatus.|
|Subject Keywords:||InGaAsP; microcavities; photonic crystals; quantum-well laser; semiconductor device fabrication; spontaneous emission control|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||23 Jan 2006|
|Last Modified:||26 Dec 2012 08:44|
Repository Staff Only: item control page