McGill, T. C. and Collins, D. A. (1983) Prospects for the future of narrow bandgap materials. Semiconductor Science and Technology, 8 (1S). S1-S5. ISSN 0268-1242 http://resolver.caltech.edu/CaltechAUTHORS:MCGsst93
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Recently there has been greatly expended interest in narrow bandgap materials. Modern epitaxial techniques and the growing interest in nanostructures have provided areas of application for some of the unique properties of the narrow bandgap material. As always, one of the primary sources of interest is the small bandgap which makes them the material of choice for many applications in the infrared. However, in recent years their other unique properties have been the basis for a broader set of interests in narrow bandgap semiconductors. The type II band offsets (InAs/GaSb) have been the basis for novel tunnel devices and infrared superlattices. The very small effective masses inherent in small bandgap materials make them the obvious candidates in which to observe quantum confinement effects at larger dimensions than in materials of larger effective mass and wider gap. The ease of making electrical contact to some of the materials (ohmic contact to n-InAs) has made them the material of choice for electrical nanostructures. The ability to put in large amounts of magnetic ions to make magnetic semiconductors has led to a number of novel properties. The technical importance of a narrow bandgap and the unique applications promised by some of the other properties of these materials bode well for substantial research in narrow bandgap semiconductors well into the next decade.
|Additional Information:||© 1993 IOP Publishing Ltd Opening Address: NARROW GAP SEMICONDUCTORS 1992 PROCEEDINGS OF THE 6TH INTERNATIONAL CONFERENCE 19-23 JULY 1992, SOUTHAMPTON UK The authors gratefully acknowledge discussions of all aspects of this work with D H Chow (Hughes Research Labs), J R Soderstrom (Ericsson), D L Smith (Los Alamos National Lab), R H Miles (Hughes Research Labs), H Ehrenreich (Harvard), R W Grant (Rockwell/Caltech), T Fu, J O McCaldin, D Z Ting, R Marquardt and Y X Liu (all Caltech). Financial support provided by the Office of Naval Research, Air Force Office of Scientific Research and Defense Advanced Research Projects Agency is gratefully acknowledged.|
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