Hwang, Gyeong S. and Goddard, William A., III (2003) Shouldering in B diffusion profiles in Si: Role of di-boron diffusion. Applied Physics Letters, 83 (17). pp. 3501-3503. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:HWAapl03b
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:HWAapl03b
The role of di-boron diffusion in evolution of B diffusion profiles has been investigated. We find that boron pair (B-s-B-i) diffusion can become as important as boron-interstitial pair (B-s-Si-i) diffusion when both boron concentration and annealing temperature are very high, leading to concentration-dependent B diffusion. Our simulated B diffusion profiles with dramatic shouldering are in excellent agreement with experimental ones reported by Schroer [Appl. Phys. Lett. 74, 3996 (1999)] for high-temperature (approximate to 1200 degrees C) postimplantion annealing of ultralow-energy (approximate to500 eV) implanted high-concentration (>10(19) cm(-3)) boron in silicon.
|Additional Information:||Copyright © 2003 American Institute of Physics. Received 26 March 2002; accepted 17 August 2003. The authors thank Masamitsu Uehara and Yuzuru Sato of Seiko-Epson Corporation for many helpful discussions. They thank Seiko-Epson Corporation for providing financial support. G.S.H. also thanks the Welch Foundation for their partial financial support. The facilities of the MSC are also supported by grants from DOE-ASCI, ARO/DURIP, NSF (CHE) ARO/MURI, NIH, Chevron-Texaco, Beckman Institute, 3M, Dow Chemical, Avery-Dennison, General Motors, Kellogg’s, Asahi Chemical, and Nippon Steel.|
|Subject Keywords:||AB-INITIO; DOPANT DIFFUSION; IMPLANTED BORON; SILICON; DEFECTS|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||10 Feb 2006|
|Last Modified:||26 Dec 2012 08:45|
Repository Staff Only: item control page