Jiang, Fan and Stavola, Michael and Rohatgi, A. and Kim, D. and Holt, J. and Atwater, H. and Kalejs, J. (2003) Hydrogenation of Si from SiNx(H) films: Characterization of H introduced into the Si. Applied Physics Letters, 83 (5). pp. 931-933. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:JIAapl03
See Usage Policy.
Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:JIAapl03
A promising method to introduce H into multicrystalline Si solar cells in order to passivate bulk defects is by the postdeposition annealing of a H-rich, SiNx surface layer. It has previously been difficult to characterize the small concentration of H that is introduced by this method. Infrared spectroscopy has been used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiNx film.
|Additional Information:||Copyright © 2003 American Institute of Physics. Received 12 May 2003; accepted 17 June 2003. The authors thank Mark Rosenblum for his assistance with their experiments. Work performed at Lehigh University was supported by NREL Contract No. AAT-1-31606-04 and NSF Grant No. DMR-0108914.|
|Subject Keywords:||SILICON SOLAR-CELLS; CHEMICAL-VAPOR-DEPOSITION; CRYSTALLINE SILICON; SURFACE PASSIVATION; NITRIDE; DISSOCIATION; DIFFUSION|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||10 Feb 2006|
|Last Modified:||26 Dec 2012 08:45|
Repository Staff Only: item control page