Jiang, Fan and Stavola, Michael and Rohatgi, A. and Kim, D. and Holt, J. and Atwater, H. and Kalejs, J. (2003) Hydrogenation of Si from SiNx(H) films: Characterization of H introduced into the Si. Applied Physics Letters, 83 (5). pp. 931-933. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:JIAapl03
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Abstract
A promising method to introduce H into multicrystalline Si solar cells in order to passivate bulk defects is by the postdeposition annealing of a H-rich, SiNx surface layer. It has previously been difficult to characterize the small concentration of H that is introduced by this method. Infrared spectroscopy has been used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiNx film.
| Item Type: | Article |
|---|---|
| Additional Information: | Copyright © 2003 American Institute of Physics. Received 12 May 2003; accepted 17 June 2003. The authors thank Mark Rosenblum for his assistance with their experiments. Work performed at Lehigh University was supported by NREL Contract No. AAT-1-31606-04 and NSF Grant No. DMR-0108914. |
| Subject Keywords: | SILICON SOLAR-CELLS; CHEMICAL-VAPOR-DEPOSITION; CRYSTALLINE SILICON; SURFACE PASSIVATION; NITRIDE; DISSOCIATION; DIFFUSION |
| Record Number: | CaltechAUTHORS:JIAapl03 |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:JIAapl03 |
| Alternative URL: | http://dx.doi.org/10.1063/1.1598643 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 1677 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Tony Diaz |
| Deposited On: | 10 Feb 2006 |
| Last Modified: | 26 Dec 2012 08:45 |
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