Adams, K. H. and Blish, R. C., II and Vreeland, T., Jr. (1966) Orientation Dependence of a Dislocation Etch for Zinc. Journal of Applied Physics, 37 (11). pp. 4291-4292. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:ADAjap66
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The dislocation etch for (101-[bar]0] surfaces of zinc reported by Brandt, Adams, and Vreeland have been further explored. Additional surface orientations have been found where dislocation etching takes place. These orientations cover an area located between 3 degrees and 12.2 degrees to the , and the area is symmetric about that axis. Attempts to produce dislocation etching on within 2 degrees of (0001) were generally unsuccessful. This is in contrast to etching of many crystals which takes place only within a few degrees of a low index plane.
|Additional Information:||Copyright © 1966 American Institute of Physics. Received: 2 May 1966 This work was sponsored by the U.S. Atomic Energy Commission.|
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|Deposited On:||12 Feb 2006|
|Last Modified:||26 Dec 2012 08:45|
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