Affolter, K. and Zhao, X.-A. and Nicolet, M.-A. (1985) Transition-metal silicides formed by ion mixing and by thermal annealing: Which species moves? Journal of Applied Physics, 58 (8). pp. 3087-3083. ISSN 0021-8979 http://resolver.caltech.edu/CaltechAUTHORS:AFFjap85
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The moving species during the formation of Pt2Si, Ni2Si, and CrSi2 by both ion mixing with 300–600 keV Xe ions and thermal annealing is identified with inert markers using backscattering spectrometry. Samples of metal-on-silicon and silicon-on-metal have been used, evaporated on SiO2 substrates with two very thin markers (Mo for Pt2Si, W for Ni2Si and CrSi2) placed at the metal–silicon interface, and at the bottom interface with the SiO2 substrate. Monitoring the separation of the two markers as a function of the amount of silicide formed determines the ratio of atomic transport through the growing silicide layer. The results establish that the dominant moving species in both silicide formation processes is the same for the refractory metal-silicide CrSi2, e.g., Si, whereas different atomic transport ratios are found in the case of the near-noble metal silicides Pt2Si and Ni2Si. This outcome is discussed in terms of high-temperature effects during thermal formation of transition-metal silicides.
|Additional Information:||©1985 The American Institute of Physics. (Received 9 May 1985; accepted 25 June 1985) We thank A. Ghaffari for sample preparation and acknowledge his growing skill in depositing very thin layers of various metals. We are indebted to Jim Chen (student) for valuable help in performing the thermal annealing experiements. One of the authors (K.A.) expresses his gratitude to the National Science Foundation (USA) and the Swiss National Science Foundation for an exchange award. Partial financial support was provided by the Office of Naval Research under contract No. N00014-84-K-0275.|
|Subject Keywords:||ION COLLISIONS; MIXING; DIFFUSION; MIGRATION; PLATINUM; SILICON; NICKEL; CHROMIUM; CHROMIUM SILICIDES; NICKEL SILICIDES; PLATINUM SILICIDES; SILICA; ATOM TRANSPORT; XENON IONS; KEV RANGE 100–1000; BACKSCATTERING; ANNEALING; SYNTHESIS; SURFACE COATING; COLLISIONS; COATINGS|
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|Deposited On:||12 Feb 2006|
|Last Modified:||26 Dec 2012 08:45|
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