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Organic field-effect transistors with nonlithographically defined submicrometer channel length

Scheinert, Susanne and Doll, Theodor and Scherer, Axel and Paasch, Gernot and Hörselmann, Ingo (2004) Organic field-effect transistors with nonlithographically defined submicrometer channel length. Applied Physics Letters, 84 (22). pp. 4427-4429. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:SCHEapl04

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Abstract

We developed an underetching technique to define submicrometer channel length polymer field-effect transistors. Short-channel effects are avoided by using thin silicon dioxide as gate insulator. The transistors with 1 and 0.74 mum channel length operate at a voltage as low as 5 V with a low inverse subthreshold slope of 0.4-0.5 V/dec, on-off ratio of 10(4), and without short-channel effects. The poly(3-alcylthiophene)'s still suffer from a low mobility and hysteresis does occur, but it is negligible for the drain voltage variation. With our underetching technique also device structures with self-aligned buried gate and channel length below 0.4 mum are fabricated on polymer substrates.


Item Type:Article
Additional Information:Copyright © 2004 American Institute of Physics. Received 3 December 2003; accepted 6 April 2004; published online 12 May 2004.
Subject Keywords:SUBTHRESHOLD CHARACTERISTICS; MOBILITY; CIRCUITS; DEVICES; INSULATOR
Record Number:CaltechAUTHORS:SCHEapl04
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:SCHEapl04
Alternative URL:http://dx.doi.org/10.1063/1.1758775
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1703
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:13 Feb 2006
Last Modified:26 Dec 2012 08:45

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