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Size-dependent oxygen-related electronic states in silicon nanocrystals

Biteen, J. S. and Lewis, N. S. and Atwater, H. A. and Polman, A. (2004) Size-dependent oxygen-related electronic states in silicon nanocrystals. Applied Physics Letters, 84 (26). pp. 5389-5391. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:BITapl04

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Abstract

Silicon nanocrystals embedded in SiO2 were isolated with a selective etching procedure, and the isolated nanocrystals' excitonic emission energy was studied during controlled oxidation. Nanocrystals having initial diameters, d(0), of similar to 2.9-3.4 nm showed a photoluminescence (PL) blueshift upon oxidatively induced size reduction, as expected from models of quantum confinement. Oxidation of smaller Si nanocrystals (d(0)similar to 2.5-2.8 nm) also initially resulted in a PL blueshift, but a redshift in the PL was then observed after growth of similar to 0.3 monolayers of native oxide. This decrease in excitonic emission energy during oxidation is consistent with the theoretically predicted formation of an oxygen-related excitonic recombination state.


Item Type:Article
Additional Information:Copyright © 2004 American Institute of Physics. Received 20 January 2004; accepted 29 April 2004; published online 17 June 2004. This work was supported by NSF. The Dutch contribution to this work is part of the research program of FOM and is financially supported by NWO.
Subject Keywords:silicon; silicon compounds; nanocomposites; etching; oxidation; photoluminescence; spectral line shift
Record Number:CaltechAUTHORS:BITapl04
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:BITapl04
Alternative URL:http://dx.doi.org/10.1063/1.1765200
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1717
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:13 Feb 2006
Last Modified:26 Dec 2012 08:45

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