Lee, T. F. and McGill, T. C. (1973) Semiempirical calculation of deep levels: divacancy in Si. Journal of Physics C: Solid State Physics, 6 (23). pp. 3438-3450. ISSN 0022-3719 http://resolver.caltech.edu/CaltechAUTHORS:LEEjpc73
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A study of the electronic levels associated with the divacancy in silicon is reported. The extended Huckel theory is shown to reproduce the band structure of silicon. The electronic levels of the divacancy are calculated by considering a periodic array of large unit cells each containing 62 atoms; a 64 atom perfect cell with two atoms removed to form the divacancy. The results are found to be in qualitative agreement with the results of EPR and infrared absorption measurements.
|Additional Information:||© Institute of Physics 1973. Received 26 March 1973, in final form 11 June 1973, Print publication: Issue 23 (27 November 1973) The authors would like to acknowledge discussions with R P Messmer, G D Watkins, and F P Larkins.|
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|Deposited On:||13 Feb 2006|
|Last Modified:||26 Dec 2012 08:45|
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