Arakawa, Y. and Vahala, K. and Yariv, A. and Lau, K. (1986) Reduction of the spectral linewidth of semiconductor lasers with quantum wire effects—Spectral properties of GaAlAs double heterostructure lasers in high magnetic fields. Applied Physics Letters, 48 (6). pp. 384-386. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:ARAapl86
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The spectral linewidth of a GaAlAs double heterostructure laser placed in a high magnetic field is measured at 190 K. It is found that the power-dependent spectral linewidth is reduced by a factor of 0.6 in a magnetic field of 19 T. This reduction is believed to result mainly from the reduction of the linewidth enhancement factor alpha due to a quasi-one-dimensional electronic system formed by the high magnetic field (i.e., by quantum wire effects).
|Additional Information:||Copyright © 1986 American Institute of Physics. (Received 11 November 1985; accepted 9 December 1985) This work was supported by the Air Force Office of Scientific Research, the Office of Naval Research, I. T. T. Corporation, and the Japanese Society for the Promotion of Science. Part of this work was performed while the authors were guest scientists at the Francis Bitter National Magnet Laboratory at MIT, which is supported by the National Science Foundation. The authors would like to express their sincere thanks to Dr. Larry Rubin and Bruce Brandt at the National Magnet Laboratory for their assistance in this experiment.|
|Subject Keywords:||SEMICONDUCTOR LASERS; LINE WIDTHS; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; EXPERIMENTAL DATA; MAGNETIC FIELDS; HETEROJUNCTIONS; LOW TEMPERATURE; DH LASERS; MAGNETIC FIELD EFFECTS|
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|Deposited On:||15 Feb 2006|
|Last Modified:||26 Dec 2012 08:45|
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