Arakawa, Y. and Vahala, K. and Yariv, A. and Lau, K. (1985) Enhanced modulation bandwidth of GaAlAs double heterostructure lasers in high magnetic fields: Dynamic response with quantum wire effects. Applied Physics Letters, 47 (11). pp. 1142-1144. ISSN 0003-6951 http://resolver.caltech.edu/CaltechAUTHORS:ARAapl85
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The modulation bandwidth of GaAlAs double heterostructure (DH) lasers in high magnetic fields is measured. We found that the modulation bandwidth is enhanced by 1.4× with a magnetic field of 20 T. This improvement is believed to result from the increase of the differential gain due to two-dimensional carrier confinement effects in the high magnetic field (quantum wire effects). A comparison of the experimental results with a theoretical analysis indicates that the intraband relaxation time tauin of the measured DH laser in the range of 0.1 to 0.2 ps.
|Additional Information:||Copyright © 1985 American Institute of Physics. (Received 1 July 1985; accepted 9 September 1985) Part of this work was performed while the authors were guest scientists at the Francis Bitter National Magnet Laboratory at MIT, which is supported by the National Science Foundation. The authors would like to express their sincere thanks to Dr. Larry Rubin and Bruce Brandt at the National Magnet Laboratory for their assistance in this experiment. This work was supported by the Air Force Office of Scientific Research, the Office of Naval Research, I. T. T. Corporation, and the Japanese Society for the Promotion of Science.|
|Subject Keywords:||MODULATION; SEMICONDUCTOR LASERS; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; GAIN; RELAXATION; CARRIER DENSITY; MAGNETIC FIELDS; BANDWIDTH; MAGNETIC FIELD EFFECTS; RELAXATION TIME; PS RANGE|
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|Deposited On:||15 Feb 2006|
|Last Modified:||26 Dec 2012 08:45|
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