Bai, G. and Nicolet, M.-A. and Mahan, John E. and Geib, Kent M. (1990) Channeling of MeV ions in polyatomic epitaxial films: ReSi2 on Si(100). Physical Review B, 41 (13). pp. 8603-8607. ISSN 0163-1829 http://resolver.caltech.edu/CaltechAUTHORS:BAIprb90
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Channeling of a He beam in the energy range from 1.4 to 2.7 MeV in a polyatomic epitaxial ReSi2 film (∼150 nm thick) was studied by detecting backscattered He ions. The critical angles and the minimum yields of both the heavy (Re) and the light (Si) elements are obtained directly from backscattering measurements. The critical angles of both Re and Si scale as √1/E. The critical angle of Re is always about 2.3 times that of Si. The minimum yields of both Re and Si do not change over this energy range. The minimum yield of Re (2%) is about 1/7 that of Si (14%). The results are explained qualitatively and quantitatively by the continuum model suitably extended for polyatomic crystals. An important corollary is that a high value for the minimum yield of the light element in a polyatomic single crystal does not necessarily mean that the sublattice of the light element is disordered.
|Additional Information:||©1990 The American Physical Society (Received 31 August 1998; accepted 6 October 1998) This material was based upon work supported in part by the National Science Foundation under Grant No. DMR-8811795 and by the Semiconductor Research Corporation under Contract No. 100-SJ-88 at Caltech, by the U.S. Army Research Office and The National Science Foundation under Grant No. ECS-8514842 at Colorado State University, and by the National Aeronautics and Space Administration through a Small Business Innovation Research contract to the Colorado Research Development Corporation. The authors gratefully acknowledge this support.|
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