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Elastic and thermal properties of mesotaxial CoSi2 layers on Si

Bai, G. and Nicolet, M.-A. and Vreeland, T., Jr. (1991) Elastic and thermal properties of mesotaxial CoSi2 layers on Si. Journal of Applied Physics, 69 (9). pp. 6451-6455. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:BAIjap91a

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Abstract

Single crystalline 110 nm thick CoSi2 layers formed on both (100)- and (111)-oriented Si wafers by high dose 59Co implantation and thermal annealing were analyzed by x-ray double crystal diffractometry. The lateral mismatch of both (100)- and (111)-oriented samples are similar (~–0.7%) at room temperature, meaning that the average spacing between misfit dislocations is roughly the same (~30 nm). But the perpendicular mismatch differs for the two substrate orientations, reflecting the elastic anisotropy of the single-crystalline CoSi2 layers. The three elastic constants of cubic CoSi2 (C11 = 277, C12C12= 222, C44 = 100 GPa) were extracted from these lattice mismatches and the sample curvature measurements. X-ray rocking curves were also recorded up to ~500 °C. The average spacing between the misfit dislocations remains unchanged, meaning that the misfit dislocations do not shear up to 500 °C. The linear thermal expansion coefficient of CoSi2 (9.5 × 10^–6/°C) was obtained under the assumption that the elastic constants do not change with temperature.


Item Type:Article
Additional Information:Copyright © 1991 American Institute of Physics (Received 21 November 1990; accepted 30 January 1991) The authors thankfully acknowledge the collaboration of A. E. White in this project and the technical assistance of K. T. Short, at AT&T Bell Laboratories, where the samples originated, A. Venezia, at Rafael, for Auger measurements, and R. Gorris, at Caltech, for technical support. This paper is based upon work supported in part by the Semiconductor Research Corporation under contract No. 100-SJ-90 and by the National Science Foundation under grant No. DMR-8811795. The authors gratefully acknowledge this support.
Subject Keywords:ELASTICITY; THERMODYNAMIC PROPERTIES; COBALT SILICIDES; SILICON; THIN FILMS; ANNEALING; X–RAY DIFFRACTION; MISFIT DISLOCATIONS
Record Number:CaltechAUTHORS:BAIjap91a
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:BAIjap91a
Alternative URL:http://dx.doi.org/0.1063/1.348850
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1741
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:15 Feb 2006
Last Modified:26 Dec 2012 08:45

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