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Defect production in Si(100) by 19F, 28Si, 40Ar, and 131Xe implantation at room temperature

Bai, G. and Nicolet, M.-A. (1991) Defect production in Si(100) by 19F, 28Si, 40Ar, and 131Xe implantation at room temperature. Journal of Applied Physics, 70 (7). pp. 3551-3555. ISSN 0021-8979. http://resolver.caltech.edu/CaltechAUTHORS:BAIjap91c

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Abstract

We used x-ray double-crystal diffractometry and MeV 4He channeling spectrometry to study quantitatively the damage produced in Si(100) at room temperature by 230-keV 19F, 230-keV 28Si, 250-keV 40Ar, or 570-keV 131Xe implantation. The measured defect concentration and the perpendicular strain have the same depth profile, and both are depleted near the surface compared to the Frenkel pair concentration calculated from computer simulation. The perpendicular strain is proportional to the defect concentration with a coefficient of B~0.01 common to all implanted species. The maximum value of the perpendicular strain and of the defect concentration rises nonlinearly with the dose for all species. The damage produced by different implanted species depends on the dose in approximately the same way save for a scaling factor of the dose. In the regime of low damage, the strain and the defect concentration rise linearly with increasing dose. The slope of this rise with dose increases with the square of the Frenkel pairs produced per unit dose of incident ions, as calculated from computer simulations. This fact means that stable defects produced by room-temperature implantation in Si(100) cannot be predicted by a linear cascade model.


Item Type:Article
Additional Information:Copyright © 1991 American Institute of Physics (Received 13 May 1991; accepted 1 July 1991) This work was supported in part by the Semiconductor Research Corporation under contract Nd. lOO-SJ-90, and by the National Science Foundation under grant No. DMR-8811795. The authors gratefully acknowledge this support.
Subject Keywords:SILICON; DEFECTS; ION BEAMS; STRAINS; PHYSICAL RADIATION EFFECTS; ION IMPLANTATION; FLUORINE IONS; SILICON IONS; ARGON IONS; XENON IONS; MEDIUM TEMPERATURE; KEV RANGE 100–1000; X–RAY DIFFRACTION
Record Number:CaltechAUTHORS:BAIjap91c
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:BAIjap91c
Alternative URL:http://dx.doi.org/10.1063/1.349251
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:1743
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:15 Feb 2006
Last Modified:26 Dec 2012 08:45

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